advanced power p-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss -40v fast switching characteristic r ds(on) 38m rohs compliant i d -6.5a description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w w/ t stg t j symbol value unit rthj-a thermal resistance junction-ambient 3 max. 50 /w data and specifications subject to change without notice thermal data parameter total power dissipation 2.5 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 0.02 storage temperature range continuous drain current 3 -5.2 pulsed drain current 1 -30 parameter drain-source voltage gate-source voltage continuous drain current 3 pb free plating product 200503061-1/4 AP9565GEM rating -40 16 -6.5 the advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the so-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. s s s g d d d d so-8 g d s
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -40 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =-1ma - -0.02 - v/ r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-6a - - 38 m v gs =-4.5v, i d =-4a - - 48 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -0.8 - -2.5 v g fs forward transconductance v ds =-10v, i d =-6a - 6 - s i dss drain-source leakage current (t j =25 o c) v ds =-40v, v gs =0v - - -1 ua drain-source leakage current (t j =70 o c) v ds =-32v, v gs =0v - - -25 ua i gss gate-source leakage v gs = 16v - - 30 ua q g total gate charge 2 i d =-6a - 12.8 20 nc q gs gate-source charge v ds =-30v - 2.1 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 6.3 - nc t d(on) turn-on delay time 2 v ds =-20v - 8.9 - ns t r rise time i d =-1a - 6 - ns t d(off) turn-off delay time r g =3.3 , v gs =-10v - 26.9 - ns t f fall time r d =20 - 36.9 - ns c iss input capacitance v gs =0v - 980 1570 pf c oss output capacitance v ds =-25v - 160 - pf c rss reverse transfer capacitance f=1.0mhz - 110 - pf r g gate resistance f=1.0mhz - 6 9 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-1.9a, v gs =0v - - -1.3 v t rr reverse recovery time i s =-6a, v gs =0 v , - 25 - ns q rr reverse recovery charge di/dt=100a/s - 19 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse width < 300us , duty cycle < 2%. 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10sec ; 125 /w when mounted on min. copper pad. 2/4 AP9565GEM
AP9565GEM fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. on-resistance vs. reverse diode drain current 3/4 0 10 20 30 0246810 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =150 o c -10v -7.0v -5.0v -4.5v v g = -3.0v 20 40 60 80 100 120 246810 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d =-4a t a =25 o c 0.6 1.0 1.4 1.8 25 50 75 100 125 150 t j , junction temperature ( o c) normalized r ds(on) i d =-6a v g = -10v 0 10 20 30 02468 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =25 o c -10v -7.0v -5.0v -4.5v v g = -3.0v 0 2 4 6 8 0 0.2 0.4 0.6 0.8 1 1.2 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 20.0 30.0 40.0 50.0 60.0 010203040 -i d , drain current (a) r ds(on) (m ? ) v gs = -4.5v v gs = -10v
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4/4 AP9565GEM 0 4 8 12 16 0 5 10 15 20 25 30 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d = -6a v ds = -30v 10 100 1000 10000 1 5 9 1317212529 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh c iss c oss c rss q v g -4.5v q gs q gd q g charge 0.01 0.1 1 10 100 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) 100us 1ms 10ms 100ms 1s dc t a =25 o c single pulse 0 10 20 30 40 0246 -v gs , gate-to-source voltage (v) -i d , drain current (a) t j =150 o c t j =25 o c v ds = -5v 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c r thja =125 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse
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